I found the features on the GP1A18

[galody]

The features of GT-32011 can be summarized as (1)single chip system controller for the lDT R3051 family of processors; (2)features facilitate the implementation of high-performance embedded control systems; (3)16Mhz - 33Mhz CPU interface to: RSO41/51/52/71/81; (4)DRAM controller: 1 - 40 MB directly, device depth supported: 256K - 4M, 1 - 3 banks directly, non-interleave; (5)ROM controller: 1 - 20MB address -space support bank size: 1- 8MB; (6)support for standard and burst ROMs, support for interleave or non interleave; (7)direct interface to external agent/coprocessor; (8)I/O bus follows 8/16 lntel 80186 style; (9)I/O controller: two 8-bit and two 16-bit extemal channels DMA and non-DMA access for the 8-bit channels 8-32 packing and 32-8 unpacking logic for DMA access, round robin arbitration, programmable timing for I/O and control signals, big and little endian support, 16-32 packing and 32-16 unpacking for CPU) Exter-; (10)nal Co-processor accesses; (11)PCMCIA support; through 16-bit I/O bus, using simple glue logic; (12)16-bit to 32-bit packing and 32-bit to 16-bit unpacking, big and little endian support, 256MB address space dedicated for 2 PCMCIA slots; (13)parallel port: supports control for reading and writing from a 16-bit; (14)parallel port; (15)centronics interface: Bi- directional centronics, compliant with IEEE1284, supports DMA and CPU controlled transfers, supports the following modes: compatible; nibble; Byte; ECP; EPP; (16)interrupt controller: 6 external level interrupts (through the PIO pins); (17)10 internal interrupts, individual interrupt mask capability, enabling polling or interrupt- driven systems; (18)general purpose I/O: six programmable Input (interrupts) or Output pins; (19)24-bit timer/counter; (20)in-circuit testing capability; (21)packaged in a 160-pin PQFP.

The DC electerical specifications of GT-32011 are (1)VIH input high voltage: 20 to VDD+05V; (2)VIL input low voltage: -05 to 08V; (3)VOH output high voltage: 24V; (4)VOL output low voltage: 04V; (5)llN input leakage current: -10 to 10μA(VIN = VDD or GND); (6)IOZ 3-state output leakage current: -10 to 10μA(VOUT = VDD or GND); (7)ICC operating current: 200 mA(VDD = 5V Ta=25°C); (8)CINCLK CLK input capacitance: 11 pF; (9)CIN input capacitance: 5pF.